1 radiation hardened high frequency half bridge drivers is-2100arh, IS-2100AEH the radiation hardened is-2100arh, IS-2100AEH are high frequency, 130v half bridge n-channel mosfet driver ics, which are functionally similar to industry standard 2110 types. the low-side and high-side gate drivers are independently controlled. this gives the user maximum flexibility in dead-time selection and driver protocol. in addition, the devices have on-chip error detection and correction circuitry, which monitors the state of the high-side latch and compares it to the hin signal. if they disagree, a set or reset pulse is generated to co rrect the high-side latch. this feature protects the high-side la tch from single event upsets (seus). specifications for rad hard qml devices are controlled by the defense logistics agency land and maritime (dla). the smd numbers listed here must be used when ordering. detailed electrical specific ations for the is-2100arh, IS-2100AEH are contained in smd 5962-99536 . a ?hotlink? is also provided on our website for downloading. features ? electrically screened to dla smd # 5962-99536 ? qml qualified per mil-prf-38535 requirements ? radiation environment - maximum total dose. . . . . . . . . . . . . . . . . . . . . 300krad(si) - di rsg process provides latch-up immunity - seu rating . . . . . . . . . . . . . . . . . . . . . . . . . 82mev/mg/cm 2 - vertical device architecture reduces sensitivity to low dose rates ? bootstrap supply max voltage to 150v ? drives 1000pf load at 1mhz with rise and fall times of 30ns (typ) ? 1.5a (typ) peak output current ? independent inputs for non-half bridge topologies ? low dc power consumption. . . . . . . . . . . . . . . . . 60mw (typ) ?operates with v dd = v cc over 12v to 20v range ? low-side supply undervoltage protection applications ? high frequency switch-mode power supplies ? drivers for inductive loads ?dc motor drivers pin configuration is-2100arh, IS-2100AEH flatpack (cdfp4-f16) top view ordering information ordering number intersil mkt. number temp. range (c) 5962f9953602v9a is0-2100arh-q -55 to +125 5962f9953602vxc is9-2100arh-q -55 to +125 5962f9953602qxc is9-2100arh-8 -55 to +125 is9-2100arh/proto is9-2100arh/proto -55 to +125 5962f9953603vxc is9-2100aeh-q -55 to +125 5962f9953603v9a is0-2100aeh-q -55 to +125 lo com v cc nc nc vs vb ho 2 3 4 5 6 7 8 116 15 14 13 12 11 10 9 nc v ss lin sd hin v dd nc nc caution: these devices are sensitive to electrostatic discharge; follow proper ic handling procedures. 1-888-intersil or 1-888-468-3774 | copyright intersil americas inc. 2002, 2012. all rights reserved intersil (and design) is a trademark owned by intersil corporation or one of its subsidiaries. all other trademarks mentioned are the property of their respective owners. august 28, 2012 fn9037.2
is-2100arh, IS-2100AEH 2 intersil products are manufactured, assembled and tested utilizing iso9000 quality systems as noted in the quality certifications found at www.intersil.com/design/quality intersil products are sold by description only. intersil corporat ion reserves the right to make changes in circuit design, soft ware and/or specifications at any time without notice. accordingly, the reader is cautioned to verify that data sheets are current before placing orders. information furnished by intersil is believed to be accurate and reliable. however, no responsi bility is assumed by intersil or its subsid iaries for its use; nor for any infringem ents of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of i ntersil or its subsidiaries. for information regarding intersil corporation and its products, see www.intersil.com fn9037.2 august 28, 2012 for additional products, see www.intersil.com/product_tree die characteristics die dimensions: 4820 m x 3300 m (190 mils x 130 mils) thickness: 483 m 25.4 m (19 mils 1 mil) interface materials: glassivation: type: psg (phosphorous silicon glass) thickness: 8.0k ? 1.0k ? top metallization: type: alsicu thickness: 16.0k ? 2k ? substrate: radiation hardened silicon gate, dielectric isolation backside finish: silicon assembly related information: substrate potential: unbiased (di) additional information: worst case current density: <2.0 x 10 5 a/cm 2 transistor count: 542 metallization mask layout is-2100arh, IS-2100AEH sd (13) lin (14) v ss (15) com (2) v cc (3) hin (12) v dd (11) ho (8) vb (7) vs (6) lo (1)
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